IndiumV3, Main, Repository, bibRecord, 000C08

High optical quality single crystal phase wurtzite and zincblende InP nanowires

Identifieur interne : 000C08 ( Main/Repository ); précédent : 000C07; suivant : 000C09

High optical quality single crystal phase wurtzite and zincblende InP nanowires

Auteurs : RBID : Pascal:13-0169101

Descripteurs français

Pascal (Inist)
- Matériau optique, Perfection cristalline, Composé III-V, Semiconducteur III-V, Nanofil, Nanomatériau, Maclage, Superréseau, Synthèse nanomatériau, Epitaxie phase vapeur, Méthode MOVPE, Méthode VLS, Gravure, Mécanisme croissance, Monocristal, Phosphure d'indium, Défaut empilement, Structure cristalline, Structure électronique, Polytypisme, Exciton lié, Photoluminescence, InP, 8107V, 8107B, 6146, 8116.

English descriptors

KwdEn :
- Bound exciton, Crystal perfection, Crystal structure, Electronic structure, Etching, Growth mechanism, III-V compound, III-V semiconductors, Indium phosphide, MOVPE method, Monocrystals, Nanomaterial synthesis, Nanostructured materials, Nanowires, Optical materials, Photoluminescence, Polytypism, Stacking faults, Superlattices, Twinning, VLS growth, VPE.

Abstract

We report single crystal phase and non-tapered wurtzite (WZ) and zincblende twinning superlattice (ZB TSL) InP nanowires (NWs). The NWs are grown in a metalorganic vapor phase epitaxy (MOVPE) reactor using the vapor-liquid-solid (VLS) mechanism and in situ etching with HCl at a high growth temperature. Our stacking fault-free WZ and ZB TSL NWs allow access to the fundamental properties of both NW crystal structures, whose optical and electronic behaviors are often screened by polytypism or incorporated impurities. The WZ NWs show no acceptor-related emission, implying that the VLS-grown NW is almost free of impurities due to sidewall removal by HCl. They only emit light at the free exciton (1.491 eV) and the donor bound exciton transition (1.4855 eV). The ZB NWs exhibit a photoluminescence spectrum being unaffected by the twinning planes. Surprisingly, the acceptor-related emission in the ZB NWs can be almost completely removed by etching away the impurity-contaminated sidewall grown via a vapor-solid mechanism.

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Pascal:13-0169101

Le document en format XML

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<author><name sortKey="Verheijen, Marcel A" uniqKey="Verheijen M">Marcel A. Verheijen</name>
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<author><name sortKey="Plissard, Sebastien R" uniqKey="Plissard S">Sebastien R. Plissard</name>
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<author><name sortKey="Immink, George W G" uniqKey="Immink G">George W. G. Immink</name>
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<author><name sortKey="Bakkers, Erik P A M" uniqKey="Bakkers E">Erik P. A M. Bakkers</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Eindhoven University of Technology, PO Box 513</s1>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Bound exciton</term>
<term>Crystal perfection</term>
<term>Crystal structure</term>
<term>Electronic structure</term>
<term>Etching</term>
<term>Growth mechanism</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Indium phosphide</term>
<term>MOVPE method</term>
<term>Monocrystals</term>
<term>Nanomaterial synthesis</term>
<term>Nanostructured materials</term>
<term>Nanowires</term>
<term>Optical materials</term>
<term>Photoluminescence</term>
<term>Polytypism</term>
<term>Stacking faults</term>
<term>Superlattices</term>
<term>Twinning</term>
<term>VLS growth</term>
<term>VPE</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Matériau optique</term>
<term>Perfection cristalline</term>
<term>Composé III-V</term>
<term>Semiconducteur III-V</term>
<term>Nanofil</term>
<term>Nanomatériau</term>
<term>Maclage</term>
<term>Superréseau</term>
<term>Synthèse nanomatériau</term>
<term>Epitaxie phase vapeur</term>
<term>Méthode MOVPE</term>
<term>Méthode VLS</term>
<term>Gravure</term>
<term>Mécanisme croissance</term>
<term>Monocristal</term>
<term>Phosphure d'indium</term>
<term>Défaut empilement</term>
<term>Structure cristalline</term>
<term>Structure électronique</term>
<term>Polytypisme</term>
<term>Exciton lié</term>
<term>Photoluminescence</term>
<term>InP</term>
<term>8107V</term>
<term>8107B</term>
<term>6146</term>
<term>8116</term>
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<front><div type="abstract" xml:lang="en">We report single crystal phase and non-tapered wurtzite (WZ) and zincblende twinning superlattice (ZB TSL) InP nanowires (NWs). The NWs are grown in a metalorganic vapor phase epitaxy (MOVPE) reactor using the vapor-liquid-solid (VLS) mechanism and in situ etching with HCl at a high growth temperature. Our stacking fault-free WZ and ZB TSL NWs allow access to the fundamental properties of both NW crystal structures, whose optical and electronic behaviors are often screened by polytypism or incorporated impurities. The WZ NWs show no acceptor-related emission, implying that the VLS-grown NW is almost free of impurities due to sidewall removal by HCl. They only emit light at the free exciton (1.491 eV) and the donor bound exciton transition (1.4855 eV). The ZB NWs exhibit a photoluminescence spectrum being unaffected by the twinning planes. Surprisingly, the acceptor-related emission in the ZB NWs can be almost completely removed by etching away the impurity-contaminated sidewall grown via a vapor-solid mechanism.</div>
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<fA08 i1="01" i2="1" l="ENG"><s1>High optical quality single crystal phase wurtzite and zincblende InP nanowires</s1>
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<fA11 i1="01" i2="1"><s1>VU (Thuy T. T.)</s1>
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<fA11 i1="02" i2="1"><s1>ZEHENDER (Tilman)</s1>
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<fA11 i1="03" i2="1"><s1>VERHEIJEN (Marcel A.)</s1>
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<fA11 i1="05" i2="1"><s1>IMMINK (George W. G.)</s1>
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<fA11 i1="06" i2="1"><s1>HAVERKORT (Jos E. M.)</s1>
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<fA11 i1="07" i2="1"><s1>BAKKERS (Erik P.a M.)</s1>
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<fC01 i1="01" l="ENG"><s0>We report single crystal phase and non-tapered wurtzite (WZ) and zincblende twinning superlattice (ZB TSL) InP nanowires (NWs). The NWs are grown in a metalorganic vapor phase epitaxy (MOVPE) reactor using the vapor-liquid-solid (VLS) mechanism and in situ etching with HCl at a high growth temperature. Our stacking fault-free WZ and ZB TSL NWs allow access to the fundamental properties of both NW crystal structures, whose optical and electronic behaviors are often screened by polytypism or incorporated impurities. The WZ NWs show no acceptor-related emission, implying that the VLS-grown NW is almost free of impurities due to sidewall removal by HCl. They only emit light at the free exciton (1.491 eV) and the donor bound exciton transition (1.4855 eV). The ZB NWs exhibit a photoluminescence spectrum being unaffected by the twinning planes. Surprisingly, the acceptor-related emission in the ZB NWs can be almost completely removed by etching away the impurity-contaminated sidewall grown via a vapor-solid mechanism.</s0>
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<s5>01</s5>
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<s5>01</s5>
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<s5>02</s5>
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<s5>02</s5>
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<fC03 i1="02" i2="X" l="SPA"><s0>Perfección cristalina</s0>
<s5>02</s5>
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<s5>03</s5>
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<s5>03</s5>
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<s5>03</s5>
</fC03>
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<s5>04</s5>
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<s5>04</s5>
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<s5>05</s5>
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<s5>06</s5>
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<s5>07</s5>
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<s5>07</s5>
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<s5>08</s5>
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<s5>08</s5>
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<s5>09</s5>
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<s5>09</s5>
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<s5>09</s5>
</fC03>
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<s5>10</s5>
</fC03>
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<s5>10</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Méthode MOVPE</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>MOVPE method</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Método MOVPE</s0>
<s5>11</s5>
</fC03>
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<s5>12</s5>
</fC03>
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<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Método VLS</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Gravure</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Etching</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Mécanisme croissance</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Growth mechanism</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Mecanismo crecimiento</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Monocristal</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Monocrystals</s0>
<s5>15</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>Phosphure d'indium</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG"><s0>Indium phosphide</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA"><s0>Indio fosfuro</s0>
<s5>16</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Défaut empilement</s0>
<s5>29</s5>
</fC03>
<fC03 i1="17" i2="3" l="ENG"><s0>Stacking faults</s0>
<s5>29</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Structure cristalline</s0>
<s5>30</s5>
</fC03>
<fC03 i1="18" i2="3" l="ENG"><s0>Crystal structure</s0>
<s5>30</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>Structure électronique</s0>
<s5>31</s5>
</fC03>
<fC03 i1="19" i2="3" l="ENG"><s0>Electronic structure</s0>
<s5>31</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>Polytypisme</s0>
<s5>32</s5>
</fC03>
<fC03 i1="20" i2="3" l="ENG"><s0>Polytypism</s0>
<s5>32</s5>
</fC03>
<fC03 i1="21" i2="X" l="FRE"><s0>Exciton lié</s0>
<s5>33</s5>
</fC03>
<fC03 i1="21" i2="X" l="ENG"><s0>Bound exciton</s0>
<s5>33</s5>
</fC03>
<fC03 i1="21" i2="X" l="SPA"><s0>Excitón ligado</s0>
<s5>33</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>Photoluminescence</s0>
<s5>34</s5>
</fC03>
<fC03 i1="22" i2="3" l="ENG"><s0>Photoluminescence</s0>
<s5>34</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>InP</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="24" i2="3" l="FRE"><s0>8107V</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="25" i2="3" l="FRE"><s0>8107B</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="26" i2="3" l="FRE"><s0>6146</s0>
<s4>INC</s4>
<s5>73</s5>
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<fC03 i1="27" i2="3" l="FRE"><s0>8116</s0>
<s4>INC</s4>
<s5>74</s5>
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   |texte=   High optical quality single crystal phase wurtzite and zincblende InP nanowires
}}

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High optical quality single crystal phase wurtzite and zincblende InP nanowires

High optical quality single crystal phase wurtzite and zincblende InP nanowires

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